Panasonic Starts Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN

GaN is one of the next generation semiconductor compounds that can achieve space and energy savings when applied to transistors used in various power units. Panasonic Corporation announced at Electronica that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN in November 2016. The company will also start mass production of two types of X-GaN (PGA26E07BA and PGA26E19BA) and provide solutions in combination with high-speed gate drivers.


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